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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN SILICON Transistor VOLTAGE 160 Volts APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. CHT5551PT CURRENT 0.6 Ampere FEATURE .041 (1.05) .033 (0.85) SOT-23 * Small flat package. ( SOT-23 ) * Suitable for high packing density. CONSTRUCTION .110 (2.80) .082 (2.10) (1) *NPN SILICON Transistor .066 (1.70) .119 (3.04) (3) (2) CONSTRUCTION FT .055 (1.40) .047 (1.20) .103 (2.64) .086 (2.20) .028 (0.70) .020 (0.50) .007 (0.177) .018 (0.30) .002 (0.05) CIRCUIT 1 3 .045 (1.15) .033 (0.85) .019 (0.50) 2 Dimensions in inches and (millimeters) SOT-23 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Tamb Note 1. Transistor mounted on an FR4 printed-circuit board. 2004-8 PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) total power dissipation storage temperature junction temperature operating ambient temperature CONDITIONS open emitter open base open collector - - - - Tamb 25 C; note 1 - MIN. MAX. 180 160 6.0 600 350 +150 150 +150 UNIT V V V mA mW C C C -65 - -65 RATING CHARACTERISTIC CURVES ( CHT5551PT ) THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICBO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain CONDITIONS VCB = 120 V VCB = 120 V,TA=100OC VEB=4.0V IC = 1.0 mA; VCE = 5V IC = 10mA; VCE = 5V IC = 50 mA; VCE =5V - - - 80 80 30 MIN. MAX. 50 50 50 - 250 - UNIT nA uA nA PARAMETER thermal resistance from junction to ambient CONDITIONS note 1 VALUE 417 UNIT C//W VCEsat collector-emitter saturation voltage base-emitter saturation voltage collector capacitance IC = 10 mA; IB = 1.0 m A -50 IC = mA; IB = 5.0 m A IC =10mA; IB =1.0mA -50 IC = mA; IB = 5.0 m A IE = ie = 0; VCB = 1 0 V; f = 1 MHz VCE=10V,IC=1.0mA,f=1.0KHz - - - - - 50 100 0.15 0.2 1.0 1.0 6.0 200 300 8.0 V V V V pF VBEsat Cob hfe fT F transition frequency noise gure IC = 10 mA; VCE = 1 0 V; f = 1.0 MHz MHz dB IC = 200 mA; VCE = 5 V; RS = 1 0 ; - f =10Hz to 15.7KHz RATING CHARACTERISTIC CURVES ( CHT5551PT) V CESAT - COLLECTOR-EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN Typical Pulsed Current Gain vs Collector Current 500 300 200 100 V CE = 5V Tj=125 C Tj=25 C Tj=-55 C Collector-Emitter Saturation Voltage vs Base Current 1.0 0.8 0.6 0.4 0.2 0 0.1 Ic=10mA 30 20 10 5 1 10 I C - COLLECTOR CURRENT (mA) 100 0.2 0.3 0.5 I B - BASE CURRENT (mA) 1.0 1.0 Ic/IB=10 V CESAT - COLLECTOR-EMITTER VOLTAGE (V) V BESAT - BASE-EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 1.0 Ic/IB=10 0.8 0.6 0.4 0.2 0 0.1 0.8 0.6 0.4 0.2 0 0.1 I C 1.0 10 - COLLECTOR CURRENT (mA) 100 I C 1.0 10 - COLLECTOR CURRENT (mA) 100 |
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